Ангстрем
Дискретные MOSFET(N-channel)
Вы здесь
Готовность производства
Тип технологии
Корпус
Vds(max)
Id(max)
RDS(on)
| Название | Vds(max), В | Id(max), А | RDS(on), Ом | Исполнение |
|---|---|---|---|---|
| AnD4N70 | 700 | 4 | 3,2 | Low charge |
| AnU4N65 | 650 | 4 | 2,7 | Low charge |
| AnD4N65 | 650 | 4 | 2,7 | Low charge |
| AnU4N60 | 600 | 4 | 1,8 | Low charge |
| AnD4N60 | 600 | 4 | 1,8 | Low charge |
| AnU2N70 | 700 | 2 | 7 | Low charge |
| AnD2N70 | 700 | 2 | 7 | Low charge |
| AnU2N65 | 650 | 2 | 5,5 | Low charge |
| AnD2N65 | 650 | 2 | 5,5 | Low charge |
| AnU2N60 | 600 | 2 | 4,4 | Low charge |
| AnD2N60 | 600 | 2 | 4,4 | Low charge |
| AnU1N70 | 700 | 1 | 13 | Low charge |
| AnD1N70 | 700 | 1 | 13 | Low charge |
| AnU1N65 | 650 | 1 | 11 | Low charge |
| AnD1N65 | 650 | 1 | 11 | Low charge |
| AnU1N60 | 600 | 1 | 9,5 | Low charge |
| AnD1N60 | 600 | 1 | 9,5 | Low charge |
| AnU30N10L | 100 | 30 | 0.05 | Trench |
| AnD30N10L | 100 | 30 | 0.05 | Trench |
| AnU10N10L | 100 | 10 | 0.1 | Trench |
| AnD10N10L | 100 | 10 | 0.1 | Trench |
| AnP46N03L | 30 | 46 | 0.02 | Planar |
| AnP46N03 | 30 | 46 | 0.02 | Planar |
| AnP26N10L | 100 | 26 | 0.05 | Planar |
| AnP26N10 | 100 | 26 | 0.05 | Planar |