Ангстрем
Дискретные MOSFET(N-channel)
Вы здесь
Готовность производства
Тип технологии
Корпус
Vds(max)
Id(max)
RDS(on)
| Название | Vds(max), В | Id(max), А | RDS(on), Ом | Исполнение |
|---|---|---|---|---|
| AnB46N03L | 30 | 46 | 0.02 | Planar |
| AnB46N03 | 30 | 46 | 0.02 | Planar |
| AnB26N10L | 100 | 26 | 0.05 | Planar |
| AnB26N10 | 100 | 26 | 0.05 | Planar |
| AnP12N20L | 200 | 12 | 0.2 | Planar |
| AnP12N20 | 200 | 12 | 0.2 | Planar |
| AnB12N20L | 200 | 12 | 0.2 | Planar |
| AnB12N20 | 200 | 12 | 0.2 | Planar |
| AnP36N10 | 100 | 36 | 0.04 | Planar |
| AnB36N10 | 100 | 36 | 0.04 | Planar |
| AnP46N10 | 100 | 46 | 0.033 | Planar |
| AnB46N10 | 100 | 46 | 0.033 | Planar |
| AnU12N10L | 100 | 12 | 0.1 | Planar |
| AnD12N10L | 100 | 12 | 0.1 | Planar |
| AnB75N03 | 30 | 75 | 0.0026 | Planar |
| AnB50N06 | 60 | 50 | 0.0083 | Planar |
| AnB42N10 | 100 | 42 | 0.014 | Planar |
| AnR7N120 | 1200 | 7 | 1,7 | Planar |
| AnR11N80 | 800 | 11 | 0.75 | Planar |
| AnR16N60 | 600 | 15,5 | 0.4 | Planar |
| AnR22N50 | 500 | 22 | 0.28 | Planar |
| AnR24N40 | 400 | 24 | 0.23 | Planar |
| AnR40N20 | 200 | 40 | 0.065 | Planar |
| AnU15N07L | 70 | 15 | 0.09 | Planar |
| AnD15N07L | 70 | 15 | 0.09 | Planar |