Ангстрем
Дискретные MOSFET(N-channel)
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Готовность производства
Тип технологии
Корпус
Vds(max)
Id(max)
RDS(on)
| Название | Vds(max), В | Id(max), А | RDS(on), Ом | Исполнение |
|---|---|---|---|---|
| AnP45N06 | 60 | 45 | 0.024 | Planar |
| AnB45N06 | 60 | 45 | 0.024 | Planar |
| AnR37N03 | 30 | 37 | 0.009 | Planar |
| AnR55N06 | 60 | 55 | 0.01 | Planar |
| AnR27N20 | 200 | 27 | 0.08 | Planar |
| AnR35N20 | 200 | 35 | 0.055 | Planar |
| AnU14N10L | 100 | 14 | 0.1 | Planar |
| AnU14N10 | 100 | 14 | 0.1 | Planar |
| AnD14N10L | 100 | 14 | 0.1 | Planar |
| AnD14N10 | 100 | 14 | 0.1 | Planar |
| AnR9N65 | 650 | 8,5 | 0.93 | Planar |
| AnU6N40 | 400 | 6 | 0.7 | Low charge |
| AnD6N40 | 400 | 6 | 0.7 | Low charge |
| AnU4N25 | 250 | 4 | 0.45 | Planar |
| AnD4N25 | 250 | 4 | 0.45 | Planar |
| AnR40N08L | 80 | 40 | 0.009 | Planar |
| AnR20N12L | 120 | 20 | 0.018 | Planar |
| AnR10N20L | 200 | 10 | 0.05 | Planar |
| AnU28N10 | 100 | 28 | 0.034 | Planar |
| AnD28N10 | 100 | 28 | 0.034 | Planar |
| AnU30N06 | 60 | 30 | 0.015 | Planar |
| AnD30N06 | 60 | 30 | 0.015 | Planar |
| AnP91N03 | 30 | 91 | 0.005 | Trench |
| AnB91N03 | 30 | 91 | 0.005 | Trench |
| AnU50N03 | 30 | 50 | 0.01 | Trench |