Ангстрем
Дискретные MOSFET(N-channel)
Вы здесь
Готовность производства
Тип технологии
Корпус
Vds(max)
Id(max)
RDS(on)
| Название | Vds(max), В | Id(max), А | RDS(on), Ом | Исполнение |
|---|---|---|---|---|
| AnD50N03 | 30 | 50 | 0.01 | Trench |
| AnP65N06 | 60 | 65 | 0.01 | Trench |
| AnB65N06 | 60 | 65 | 0.01 | Trench |
| AnU35N06 | 60 | 35 | 0.02 | Trench |
| AnD35N06 | 60 | 35 | 0.02 | Trench |
| AnP53N10 | 100 | 53 | 0.015 | Trench |
| AnB53N10 | 100 | 53 | 0.015 | Trench |
| AnU29N10 | 100 | 29 | 0.03 | Trench |
| AnD29N10 | 100 | 29 | 0.03 | Trench |
| AnU20N06 | 60 | 20 | 0.06 | Low charge |
| AnD20N06 | 60 | 20 | 0.06 | Low charge |
| AnU17N10 | 100 | 17 | 0.09 | Low charge |
| AnD17N10 | 100 | 17 | 0.09 | Low charge |
| AnU9N20 | 200 | 9 | 0.32 | Low charge |
| AnD9N20 | 200 | 9 | 0.32 | Low charge |
| AnP11N40 | 400 | 11 | 0.35 | Low charge |
| AnB11N40 | 400 | 11 | 0.35 | Low charge |
| AnP4N90 | 900 | 4 | 2,3 | Low charge |
| AnB4N90 | 900 | 4 | 2,3 | Low charge |
| AnU2N90 | 900 | 2 | 5 | Low charge |
| AnD2N90 | 900 | 2 | 5 | Low charge |
| AnP3N120 | 1200 | 3 | 4,7 | Low charge |
| AnB3N120 | 1200 | 3 | 4,7 | Low charge |
| AnU2N120 | 1200 | 2 | 11 | Low charge |
| AnD2N120 | 1200 | 2 | 11 | Low charge |